US Patent Issued to Infineon Technologies Austria on May 19 for "Power semiconductor device and methods of producing a power semiconductor device" (Malaysian Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,175, issued on May 19, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Power semiconductor device and methods of producing a power semiconductor device" was invented by Manoj Chandrika Reghunathan (Kulim, Malaysia), Devesh Kumar Datta (Butterworth Penang, Malaysia), Eric Graetz (Gelugor Penang, Malaysia) and Soon Huat Niew (Klang Selangor, Malaysia).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a silicon-on-insulator (SOI) substrate and transistor cells electrically coupled in parallel to form a power transistor. Each transistor cell includes a source region in a silicon layer of the SOI substrate...