US Patent Issued to Infineon Technologies Austria on March 3 for "Semiconductor device with trench isolation structures in a transition region and method of manufacturing" (German Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,646, issued on March 3, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device with trench isolation structures in a transition region and method of manufacturing" was invented by Lars Muller-Meskamp (Dresden, Germany), Ralf Rudolf (Dresden, Germany), Annett Winzer (Dresden, Germany), Christian Schippel (Dresden, Germany), Thomas Kunzig (Baldham, Germany) and Dirk Priefert (Moers, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer, an electronic element and laterally separated trench isolation structures. The semiconductor layer includes an element region h...