ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,343, issued on June 30, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"RC-IGBT and manufacturing method of RC-IGBT" was invented by Matteo Dainese (Munich), Ahmed Elsayed (Dresden, Germany), Aleksander Hinz (Dresden, Germany) and Christian Philipp Sandow (Haar, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A reverse conducting insulated gate bipolar transistor (RC-IGBT) includes an active area in a semiconductor body. The active area includes an IGBT area, a diode area, a transition area laterally adjacent to the diode area, trenches extending into the semiconductor body from a first surface of the semiconductor body,...