US Patent Issued to Infineon Technologies Austria on June 30 for "Double gate transistor device and method of operating" (German Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,671,412, issued on June 30, was assigned to Infineon Technologies Austria AG (Villach, Germany).

"Double gate transistor device and method of operating" was invented by Markus Bina (Kolbermoor, Germany), Jens Barrenscheen (Munich) and Anton Mauder (Kolbermoor, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first g...