US Patent Issued to Infineon Technologies Austria on June 23 for "Trench gate NMOS transistor and trench gate PMOS transistor monolithically integrated in same semiconductor die" (California Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,705, issued on June 23, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Trench gate NMOS transistor and trench gate PMOS transistor monolithically integrated in same semiconductor die" was invented by Harsh Naik (El Segundo, Calif.), Timothy Henson (Mount Shasta, Calif.), Honghai He (Redondo Beach, Calif.), Robert Haase (San Pedro, Calif.), Ashita Mirchandani (Torrance, Calif.) and Alireza Mojab (El Segundo, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor die includes: a silicon substrate; a trench gate NMOS transistor formed in a first device region of the silicon substrate; a trench gate PMOS transistor ...