ALEXANDRIA, Va., June 2 -- United States Patent no. 12,647,110, issued on June 2, was assigned to Infineon Technologies Austria AG (Villach, Austria).
"Power semiconductor device current sensing" was invented by Derek Bernardon (Villach, Austria), Markus Seebacher (Wernberg, Austria) and Thomas Ferianz (Bodensdorf, Austria).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to some embodiments, a load powering circuit includes a power circuit having a power semiconductor device, a mirror circuit connected to power semiconductor device and configured to generate a mirror current signal based on current flowing through the power semiconductor device, and a drain switch having an input connected to a drain...