US Patent Issued to Infineon Technologies Austria on July 14 for "Semiconductor device and method of producing thereof" (Austrian, German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,844, issued on July 14, was assigned to Infineon Technologies Austria AG (Villach, Austria).

"Semiconductor device and method of producing thereof" was invented by Andreas Voerckel (Finkenstein, Austria), Hans Weber (Bayern, Germany) and Tobias Franz Wolfgang Hoechbauer (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device and a method for forming a transistor device are disclosed. The transistor device includes: a SiC semiconductor body that includes a first semiconductor layer and a second semiconductor layer formed on top of the first semiconductor; a trench structure extending from a first surface of the semiconduc...