US Patent Issued to Infineon Technologies, Universita degli Studi di Milano-Bicocca on July 7 for "Degradations detection for MOS-transistors and gate-drivers" (Italian, German, Austrian, French Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,609, issued on July 7, was assigned to Infineon Technologies AG (Neubiberg, Germany) and Universita degli Studi di Milano-Bicocca (Milan).

"Degradations detection for MOS-transistors and gate-drivers" was invented by Albino Pidutti (Martignacco, Italy), Jens Barrenscheen (Munich), Andrea Baschirotto (Tortona, Italy), Paolo Del Croce (Villach, Austria), Ordwin Haase (Neubiberg, Germany) and Andre Mourrier (Manosque, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "In accordance with an embodiment, a method includes: generating a gate voltage for a field-effect transistor in response to an input signal; generating a pulse signal with a pulse lengt...