US Patent Issued to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, KUNSAN NATIONAL UNIVERSITY on April 21 for "Perovskite photoelectric conversion semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,680, issued on April 21, was assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION, KUNSAN NATIONAL UNIVERSITY (Gunsan-si, South Korea).

"Perovskite photoelectric conversion semiconductor device" was invented by JungYup Yang (Gunsan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a perovskite photoelectric conversion semiconductor device. A perovskite photoelectric conversion semiconductor device includes a substrate, a first electrode formed on the substrate, an electron transport layer formed on the first electrode, a perovskite light absorbing semiconductor layer formed on the electron transport layer, a hole tr...