ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,657, issued on Nov. 3, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).
"Magnetic memory structure" was invented by Ziaur Rahaman Shakh (Hsinchu County, Taiwan), Jeng-Hua Wei (Taipei City, Taiwan) and Siddheswar Maikap (Taoyuan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory structure is provided. The magnetic memory structure includes a plurality of magnetic tunneling junction (MTJ) layers, and a plurality of heavy-metal layers. The plurality of MTJ layers includes: a pinned-layer; a barrier-layer formed under the pinned-layer; and a free-layer formed under the barrier-layer. The plurality of ...