US Patent Issued to Industrial Technology Research Institute on Aug. 11 for "Method of performing selective etch on array substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,703,659, issued on Aug. 11, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).

"Method of performing selective etch on array substrate" was invented by Hao-Wen Cheng (Pingtung County, Taiwan), Ming-Huei Yen (Taipei City, Taiwan), Wen-Jin Li (Taipei City, Taiwan), Yu-Ting Guan (Taichung City, Taiwan) and Ding-Shiang Wang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are m...