US Patent Issued to IMEC vzw on May 19 for "Method of forming a semiconductor device" (Belgian Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,211, issued on May 19, was assigned to IMEC vzw (Leuven, Belgium).

"Method of forming a semiconductor device" was invented by Hans Mertens (Leuven, Belgium) and Sujith Subramanian (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a method of forming a semiconductor device including a plurality of stacked transistor devices having a bottom transistor device and a top transistor device can include: forming a plurality of parallel fin structures on a substrate; forming a sacrificial gate across the fin structures; forming bottom source/drain bodies for each bottom transistor device by epitaxy; forming a bottom dummy contact ...