US Patent Issued to Imec vzw on July 28 for "Method for forming a FIN-based field-effect transistor using opposite-side source/drain and gate cavities" (Belgian Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,469, issued on July 28, was assigned to Imec vzw (Leuven, Belgium).

"Method for forming a FIN-based field-effect transistor using opposite-side source/drain and gate cavities" was invented by Boon Teik Chan (Wilsele, Belgium), Geert Hellings (Halle, Belgium), Bilal Chehab (Leuven, Belgium), Julien Ryckaert (Schaerbeek, Belgium) and Naoto Horiguchi (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided for forming a FET device. The method includes: forming a preliminary device structure comprising a fin structure comprising a layer stack comprising channel layers and non-channel layers alternating the channel layers, and...