ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,761, issued on Feb. 24, was assigned to IMEC VZW (Leuven, Belgium).
"Vertically stacked transistor structures" was invented by Sujith Subramanian (Leuven, Belgium), Hans Mertens (Leuven, Belgium) and Steven Demuynck (Aarschot, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a first transistor structure from a first channel layer and a second transistor structure from a second channel layer is disclosed. The first channel layer and the second channel layer are vertically stacked on a substrate. The method includes processing the first transistor structure from above, followed by processing the second transistor structure f...