ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,699, issued on Aug. 11, was assigned to Imec vzw (Leuven, Belgium).
"Semiconductor device structure" was invented by Gaspard Hiblot (Leuven, Belgium) and Julien Jussot (Kessel-Lo, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to a semiconductor device structure. The device structure comprises a first and second FETs, each comprising respective S/D structures, a respective channel structure and a respective gate structure. Each S/D structure comprises an S/D body and a set of vertically spaced apart S/D prongs protruding laterally from the S/D body. The S/D prongs of the first and second FETs extend in opposite lateral...