US Patent Issued to IMEC VZW, Katholieke Universiteit Leuven on May 5 for "Method of depositing a transition metal dichalcogenide" (Belgian Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,152, issued on May 5, was assigned to IMEC VZW (Leuven, Belgium) and Katholieke Universiteit Leuven (Leuven, Belgium).

"Method of depositing a transition metal dichalcogenide" was invented by Benjamin Groven (Kortessem, Belgium), Vladislav Voronenkov (Leuven, Belgium) and Dries Vranckx (Lubbeek, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a method of depositing a transition metal dichalcogenide is provided. The method includes depositing a layer of the transition metal dichalcogenide on a substrate by a metalorganic chemical vapor deposition process including exposing the substrate to a mixture of reactant gases including a t...