US Patent Issued to IDEMITSU KOSAN on May 5 for "Sintered body, sputtering target, oxide thin film, thin film transistor, electronic equipment, and method for producing sintered body" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,141, issued on May 5, was assigned to IDEMITSU KOSAN Co. LTD. (Tokyo).

"Sintered body, sputtering target, oxide thin film, thin film transistor, electronic equipment, and method for producing sintered body" was invented by Emi Kawashima (Tokyo), Mami Itose (Tokyo), Akira Kaijo (Tokyo), Kazuyoshi Inoue (Tokyo) and Nobuhiro Iwase (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sintered body of an oxide contains an In element, a Ga element, and an Al element, in which an atomic composition ratio of the In element and an atomic composition ratio of the Al element respectively satisfy a formula (1) and a formula (2) below, [ In ] / ( [ In ] + [ Ga...