ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,209, issued on Sept. 1, was assigned to IDEAL SEMICONDUCTOR DEVICES INC. (Bethlehem, Pa.).
"Combined charge balance and edge termination surface passivation for a semiconductor device and methods of fabricating the same" was invented by David Jauregui (Bethlehem, Pa.), Stanislav Soloviev (Breinigsville, Pa.) and Philip Rutter (Bethlehem, Pa.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided that includes an epitaxial layer disposed on a semiconductor substrate, the epitaxial layer including an active region, in which at least one active element is formed, and an edge termination region, in which at least one edge term...