US Patent Issued to IceMos Technology on Sept. 1 for "Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate" (British, American, Japanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,450, issued on Sept. 1, was assigned to IceMos Technology Ltd. (Great Britain).

"Semiconductor device and method of forming sacrificial heteroepitaxy interface to provide substantially defect-free silicon carbide substrate" was invented by Aymeric Privat (Tempe, Ariz.), Takeshi Ishiguro (Fukushima, Japan), Cathal Duffy (Belfast, Great Britain) and Samuel J. Anderson (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a first substrate made of a first semiconductor material, such as silicon. A sacrificial layer is formed over a first surface of the first substrate. A seed layer is formed over the sacrificial layer....