US Patent Issued to IceMos Technology on Nov. 3 for "Semiconductor device and method of forming MOSFET optimized for R DSON and/or C OSS" (Japanese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,376, issued on Nov. 3, was assigned to IceMos Technology Ltd. (Great Britain).

"Semiconductor device and method of forming MOSFET optimized for R DSON and/or C OSS" was invented by Takeshi Ishiguro (Fukushima, Japan), Aymeric Privat (Tempe, Ariz.) and Samuel J. Anderson (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a substrate and semiconductor layer formed over the substrate. A trench is formed through the semiconductor layer. An insulating material is disposed in the trench. A first column of semiconductor material having a first conductivity type extends through the semiconductor layer adjacent to the tren...