US Patent Issued to IceMOS Technology on April 7 for "Super-junction MOSFET/IGBT with MEMS layer transfer and WBG drain" (British, American, Japanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,782, issued on April 7, was assigned to IceMOS Technology Ltd. (Great Britain).

"Super-junction MOSFET/IGBT with MEMS layer transfer and WBG drain" was invented by Samuel J. Anderson (Tempe, Ariz.), Takeshi Ishiguro (Fukushima, Japan), Cathal Duffy (Belfast, Great Britain) and Aymeric Privat (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a substrate made of a first semiconductor material. The first semiconductor material is silicon carbide. A first semiconductor layer made of the first semiconductor material is disposed over the substrate. A second semiconductor layer made of a second semiconductor material d...