US Patent Issued to HUNAN SAN'AN SEMICONDUCTOR on Sept. 22 for "HEMT device and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,415, issued on Sept. 22, was assigned to HUNAN SAN'AN SEMICONDUCTOR Co. LTD. (Changsha, China).

"HEMT device and semiconductor device" was invented by Yutao Fang (Changsha, China), Qian Wang (Changsha, China), Nien-Tze Yeh (Changsha, China) and Jie Zhang (Changsha, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a HEMT device, including: a substrate, an epitaxial layer, a source, a drain, a gate, a conductive layer, an electrocoupling structure, and a high-resistance structure. The epitaxial layer is disposed on the substrate, and includes: a first semiconductor stack layer and a second semiconductor layer disposed on the first sem...