US Patent Issued to HUNAN SAN'AN SEMICONDUCTOR on Aug. 11 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,659, issued on Aug. 11, was assigned to HUNAN SAN'AN SEMICONDUCTOR Co. LTD. (Changsha, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Zhigao Peng (Changsha, China) and Yonghong Tao (Changsha, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a semiconductor epitaxial layer, an active region and a terminal region, a field oxide layer, an anode layer, and a passivation layer. The anode layer is configured to extend from the active region to be arranged on a portion of the field oxide layer. The side wall and the top wall of the anode layer are co...