US Patent Issued to HUBEI SINOPHORUS ELECTRONIC MATERIALS on Sept. 29 for "Selective etching solution for 3D NAND structure sheet" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,747,389, issued on Sept. 29, was assigned to HUBEI SINOPHORUS ELECTRONIC MATERIALS Co. LTD. (China).

"Selective etching solution for 3D NAND structure sheet" was invented by Shaoping Li (Yichang, China), Zhaobo He (Yichang, China), Fan Feng (Yichang, China), Rui Ye (Yichang, China), Ting Zhang (Yichang, China), Changsheng Ban (Yichang, China), Kai Feng (Yichang, China), Shuping Wang (Yichang, China) and Fei Peng (Yichang, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A selective etching solution for a 3D NAND structure sheet is provided. The etching solution includes phosphoric acid, a silane additive 1, a silane additive 2, and water. The etchi...