US Patent Issued to HUBEI JIUFENGSHAN LABORATORY on Feb. 24 for "Integration method for modularized silicon-based heterogeneous photoelectric integrated architecture" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,562,547, issued on Feb. 24, was assigned to HUBEI JIUFENGSHAN LABORATORY (Wuhan, China).

"Integration method for modularized silicon-based heterogeneous photoelectric integrated architecture" was invented by XiaoAndy Shen (Wuhan, China), Siyang Liu (Wuhan, China), Changyu Hu (Wuhan, China) and Beibei Wu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to an integration method for a modularized silicon-based heterogeneous photoelectric integrated architecture. According to the integration method, a modularized form is adopted, different functional units are used as individual unit modules, and then different type...