US Patent Issued to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY on July 7 for "Dielectric layer response-based field effect transistor photodetector" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,485, issued on July 7, was assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hubei, China).

"Dielectric layer response-based field effect transistor photodetector" was invented by Anyi Mei (Hubei, China) and Hongwei Han (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure relates to a dielectric layer response-based field effect transistor photodetector, comprising a gate, a photoelectric response composite dielectric layer, a carrier transport layer, a source, and a drain. The composite dielectric layer is formed by compounding a photoelectric response dielectric and a charge blocking insulating dielectric; the carri...