ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,821, issued on Nov. 3, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).

"High-symmetrical semiconductor arrangement" was invented by Juergen Hoegerl (Weilheim, Germany), Ruoyang Du (Dongguan, Germany) and Huibin Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor arrangement is provided, comprising: a substrate; a first group of semiconductor elements forming a first switch; a second group of semiconductor elements forming a second switch. The substrate comprises: a first electrically conductive area; a second electrically conductive area; a third electrically conductive area; a fourth electrically conductive ...