ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,659, issued on March 17, was assigned to Huawei Technologies Co. Ltd. (Shenzhen, China).
"Ferroelectric memory and storage device" was invented by Jeffrey Junhao Xu (Shenzhen, China), Weiliang Jing (Shanghai), Sitong Bu (Shenzhen, China), Yichen Fang (Beijing), Ying Wu (Shanghai), Zhaozhao Hou (Shenzhen, China), Wanliang Tan (Shenzhen, China), Heng Zhang (Beijing) and Yu Zhang (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "Example ferroelectric memories and storage devices are described. One example ferroelectric memory includes at least one bit cell. A bit cell in the at least one bit cell includes a plurality of ferroelectric capacitors...