ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,806, issued on June 9, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).
"Ferroelectric memory and storage device" was invented by Zhaozhao Hou (Shenzhen, China), Sitong Bu (Shanghai), Yichen Fang (Beijing), Yu Zhang (Shanghai) and Jeffrey Junhao Xu (Shenzhen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory includes at least one storage cell. Each storage cell includes a transistor, a first ferroelectric capacitor, and at least one voltage divider capacitor. The transistor includes a gate electrode, a source electrode, and a drain electrode. One electrode of the first ferroelectric capacitor is connected to ...