US Patent Issued to Huawei Digital Power Technologies on Sept. 22 for "Power semiconductor module and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,637, issued on Sept. 22, was assigned to Huawei Digital Power Technologies Co. Ltd. (Shenzhen, China).

"Power semiconductor module and manufacturing method thereof" was invented by Ruoyang Du (Dongguan, China) and Zhen Lv (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor module, a motor driver and a method for manufacturing a power semiconductor module. A thermal conductive layer is disposed between a heat sink and a power semiconductor package, where the thermal conductive layer is a thermal conductive material having metal bonding wires on a surface, or is a solid-state thermal conductive layer formed by curable silic...