US Patent Issued to Hon Young Semiconductor on March 31 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,631, issued on March 31, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Yan-Ru Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments of the present disclosure provide a method of forming a semiconductor device including forming a dielectric layer stack on an epitaxial layer. The dielectric layer stack includes at least one first layer and at least one second layer, the at least one first layer is made of a first material, the at least second layer is made of a second material different from the first material. The diel...