US Patent Issued to Hon Young Semiconductor on July 28 for "Semiconductor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,622, issued on July 28, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Semiconductor structure and manufacturing method thereof" was invented by Hung-Hsin Yen (Hsinchu City, Taiwan) and Chin-Hung Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a silicon carbide substrate, a silicon carbide buffer layer, and an epitaxial layer. The silicon carbide buffer layer is disposed on the silicon carbide substrate. The epitaxial layer is disposed on the silicon carbide buffer layer, in which a molar ratio of carbon to silicon atoms in the silicon carbide buffer layer gradually...