US Patent Issued to Hon Young Semiconductor on Aug. 4 for "Power module including a semiconductor device with parasitic diode" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,770, issued on Aug. 4, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Power module including a semiconductor device with parasitic diode" was invented by Yan-Ru Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an epitaxial layer on the substrate, a first well region in the epitaxial layer, a source region in the first well region, a source contact, a base region wrapping around a sidewall of the source contact and a second well region wrapping around the base region. The substrate, the epitaxial layer and the source region include a plurality of dopants of a...