US Patent Issued to Hon Young Semiconductor on Aug. 25 for "Semiconductor device and forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,810, issued on Aug. 25, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Semiconductor device and forming method thereof" was invented by Yu-Tsu Lee (Hsinchu City, Taiwan), Yan-Ru Chen (Hsinchu City, Taiwan) and Kuang-Hao Chiang (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device including a drift layer above the substrate, a source/drain region above the drift layer, an oxide thin film on the source/drain region, a contact on the oxide thin film, and a gate structure adjacent to source/drain region. The oxide thin film directly contacts the top surface of ...