US Patent Issued to HON HAI PRECISION INDUSTRY on Oct. 20 for "Memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,436, issued on Oct. 20, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan).

"Memory device and manufacturing method thereof" was invented by Chao-Wei Kuo (Hsinchu City, Taiwan) and Mu-Yi Lin (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a transistor, a first metal layer over the transistor, and a second metal layer over the first metal layer. The transistor includes a gate layer, a source region, and a drain region, in which the source region and the drain regions are at two sides of the gate layer. The first metal layer includes a bit line electrically connected to the drain...