US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on Sept. 8 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,223, issued on Sept. 8, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Yi-Kai Hsiao (New Taipei City, Taiwan), Wen-Cheng Hsu (New Taipei City, Taiwan), Kuang-Hao Chiang (New Taipei City, Taiwan) and Hao-Chung Kuo (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a P-type heavily doped region in a substrate. A sacrificial layer is formed on the substrate and covers the P-type heavily doped region. The sacrificia...