US Patent Issued to HON HAI PRECISION INDUSTRY, Hon Young Semiconductor on April 7 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,770, issued on April 7, was assigned to HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei City, Taiwan) and Hon Young Semiconductor Corp. (Hsinchu City, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Yi-Kai Hsiao (New Taipei City, Taiwan), Kuang-Hao Chiang (Hsinchu City, Taiwan) and Hao-Chung Kuo (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an epitaxial layer, a well region, a source region, a base region, a first JFET region, a second JFET region, a gate dielectric layer and a gate layer. The epitaxial layer is at a side of the substrate. The wel...