US Patent Issued to HITACHI POWER SEMICONDUCTOR DEVICE on Aug. 25 for "Semiconductor device including semiconductor element and lead-free solder bonding material and method for manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,207, issued on Aug. 25, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).

"Semiconductor device including semiconductor element and lead-free solder bonding material and method for manufacturing the same" was invented by Osamu Ikeda (Tokyo) and Masato Nakamura (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises: a diode element with a main surface having an electrode and a back surface having another electrode; a heat dissipation base arranged to face the diode element; a Cu lead arranged to face the diode element; a bonding material which bonds the back surface of the diode element...