US Patent Issued to HITACHI POWER SEMICONDUCTOR DEVICE on Aug. 11 for "Semiconductor device, method for manufacturing the semiconductor device, and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,706, issued on Aug. 11, was assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD. (Ibaraki, Japan).

"Semiconductor device, method for manufacturing the semiconductor device, and power conversion device" was invented by Tomoyasu Furukawa (Tokyo) and Tomoyuki Miyoshi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOS control diode obtained by adding a MOS control function to a PN diode, comprises: a semiconductor substrate having a PN junction diode that consists of a conductivity-type drift layer and a conductivity-type anode layer; a first conductivity-type well layer on the anode layer; a second conductivity-type low-concentration source lay...