US Patent Issued to HITACHI HIGH-TECH on May 5 for "Plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,556, issued on May 5, was assigned to HITACHI HIGH-TECH Corp. (Tokyo).

"Plasma processing apparatus" was invented by Tetsuo Kawanabe (Tokyo), Makoto Satake (Tokyo) and Motohiro Tanaka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing, including, at an upper side therein, a dielectric plate, through which microwaves are transmitted; a radio frequency power supply which supplies radio frequency power for the microwaves; a cavity resonator which resonates microwaves transmitted from the radio frequency power supply through a waveguide and ...