US Patent Issued to Hitachi High-Tech on March 24 for "Plasma processing apparatus and plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,586,760, issued on March 24, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Plasma processing apparatus and plasma processing method" was invented by Isao Mori (Tokyo) and Ryosuke Ochiai (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high-precision plasma processing apparatus configured with: a processing chamber in which a sample undergoes plasma processing; a first radio frequency power supply that supplies radio frequency power for plasma generation; a sample stage on which a sample is loaded; a second radio frequency power supply that supplies radio frequency power to the sample stage; a power supply that applies voltage to the sample s...