US Patent Issued to Hitachi High-Tech on June 2 for "Plasma processing method and plasma processing device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,692, issued on June 2, was assigned to Hitachi High-Tech Corp. (Tokyo).

"Plasma processing method and plasma processing device" was invented by Andre Amend (Tokyo), Kenichi Kuwahara (Tokyo) and Mamoru Yakushiji (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a plasma processing method and device capable of controlling the etching mask shape during a single-step process that etches a target material disposed below the etching mask. The plasma processing method includes performing selective deposition on the etching mask in separate phases, which are controlled via a periodic bias voltage signal. By tuning the bias voltage power, dura...