US Patent Issued to HITACHI HIGH-TECH on June 2 for "Plasma processing method" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,689, issued on June 2, was assigned to HITACHI HIGH-TECH Corp. (Tokyo).

"Plasma processing method" was invented by Makoto Satake (Tokyo), Takashi Shiota (Tokyo), Taku Iwase (Tokyo), Yasushi Sonoda (Tokyo) and Michikazu Morimoto (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a plasma processing method capable of constructing a self-limited process excellent in mass productivity in a cycle etching method in which an adsorption step of forming a reaction layer on a surface of an etching target wafer and a desorption step of removing the formed reaction layer using a rare gas in a metastable state are repeated. The plasma pr...