US Patent Issued to HITACHI ENERGY on Sept. 8 for "Gate-commuted thyristor cell with a base region having a varying thickness" (British, Swiss, Czech Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,225, issued on Sept. 8, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).

"Gate-commuted thyristor cell with a base region having a varying thickness" was invented by Umamaheswara Vemulapati (Windisch, Switzerland), Neophytos Lophitis (Leicestershire, Great Britain), Jan Vobecky (Prague), Florin Udrea (Cambridge, Great Britain), Thomas Stiasny (Wadenswil, Switzerland), Chiara Corvasce (Bergdietikon, Switzerland) and Marina Antoniou (Hardwick, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device (1) comprises a gate-commutated thyristor cell (20) including a cathode electrode (2), a cathode region (9) of a...