ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,773, issued on April 7, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland).
"Trench sic power semiconductor device" was invented by Marco Bellini (Zurich, Switzerland) and Lars Knoll (Hagglingen, Switzerland).
According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device comprises a drift layer of a first conductivity type, a source layer of the first conductivity type on the drift layer, with an insulated trench gate electrode which extends through the source layer into the drift layer, and an implant layer of a second conductivity type different than the first conductivity type with a homogeneous doping region having a doping var...