US Patent Issued to Hitachi Astemo on Sept. 15 for "Electronic control unit and gate driving method of power semiconductor element" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,926, issued on Sept. 15, was assigned to Hitachi Astemo Ltd. (Hitachinaka, Japan).

"Electronic control unit and gate driving method of power semiconductor element" was invented by Masahiro Doi (Hitachinaka, Japan), Takeshi Ikuyama (Hitachinaka, Japan) and Takuya Iinuma (Hitachinaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an electronic control unit on which a power semiconductor element is mounted, provided is a highly reliable and low-loss electronic control unit capable of performing a high-speed switching operation while suppressing a surge voltage during a switching operation of the power semiconductor element. The electronic co...