ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,607, issued on Aug. 11, was assigned to HITACHI ASTEMO LTD. (Hitachinaka, Japan).
"Semiconductor device" was invented by Ti Chen (Tokyo), Takeshi Tokuyama (Tokyo), Takahiro Araki (Tokyo), Junpei Kusukawa (Tokyo), Hiromi Shimazu (Tokyo) and Akihiro Namba (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "This semiconductor device comprises: a plurality of power modules, each having a semiconductor element; a plurality of heat dissipation bases that are disposed via heat dissipation members on a heat dissipation surface side of the plurality of power modules, and that each have a heat dissipation fin; a frame having a plurality of openings; and a c...