ALEXANDRIA, Va., July 14 -- United States Patent no. 12,683,580, issued on July 14, was assigned to HEYUAN AIFO LIGHT COMMUNICATION TECHNOLOGY Co. LTD. (Guangdong, China).

"Single crystal film bulk acoustic wave resonator, and preparation method and application thereof" was invented by Guoqiang Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single crystal film bulk acoustic wave resonator includes a substrate layer, a Bragg reflection layer, a first bonding layer, a second bonding layer, a piezoelectric layer and an electrode layer; a width of the electrode layer is smaller than that of the piezoelectric layer. The resonator further includes a first silicon oxide layer and a second sil...