ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,620, issued on July 28, was assigned to HERMES-EPITEK CORP. (Taipei City, Taiwan).
"Apparatus for producing silicon carbide crystal" was invented by Chih-Lung Lin (Taipei City, Taiwan), Po-Fei Yang (Taipei City, Taiwan), Chie-Sheng Liu (Taipei City, Taiwan), Chung-Hao Lin (Taipei City, Taiwan), Hsin-Chen Yeh (Taipei City, Taiwan) and Hao-Wen Wu (Taipei City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is graduall...