US Patent Issued to HENGDIAN GROUP DMEGC MAGNETICS on Sept. 1 for "Modified silicon-carbon negative electrode material, preparation method therefor, and application thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,785, issued on Sept. 1, was assigned to HENGDIAN GROUP DMEGC MAGNETICS Co. LTD (Jinhua, China).

"Modified silicon-carbon negative electrode material, preparation method therefor, and application thereof" was invented by Hailiang Ren (Jinhua, China), Guoguang Wang (Jinhua, China), Yiyao Han (Jinhua, China), Yang Xia (Jinhua, China) and Jun Xu (Jinhua, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A modified silicon-carbon negative electrode material, a preparation method therefor, and an application thereof are disclosed. A method includes mixing a silicon-carbon negative electrode material with a lithium alkoxide solution to carry out a solvo...